Disclosed in the present invention is a wind-solar complementary 5G integrated energy-saving cabinet, comprising a cabinet body. While GaN is fast improving in power level capacity, SiC is GaN FETs and ICs are finding increased adoption in solar applications. This reference design is a solar power optimizer, which can support up to 80V input voltage and 80V output voltage, providing upwards of 18A output current and input current. GaN's high-frequency switching capabilities enable more precise power conversion and tracking of maximum power points from solar panels, enhancing energy harvesting efficiency. Gallium nitride (GaN) is a wide band-gap semiconductor that enables faster switching, higher efficiency, and greater power density than traditional silicon solutions.